Progress and Constraints in Using Carbon Nanotube Films as Ultrasensitive Photodetectors

Semiconducting single-walled carbon nanotubes (s-SWCNTs) are being utilized to create a third generation of optimized shortwave infrared photodetectors, which will enhance pixel size, weight, power consumption, performance, and cost over previous photodetectors.Get more news about carbon nanotube film seller ,you can vist our website!

Numerous possible uses for ultrasensitive shortwave infrared photodetectors include nighttime surveillance, inclement weather navigation, fiber optic communications, and semiconductor quality control. These devices recognize a subset of shortwave infrared light wavelengths outside the visual spectrum.

In the past, III-V materials like indium gallium arsenide (InGaAs) have been used to create shortwave infrared photodetectors. Nevertheless, InGaAs photodetectors are expensive.

Current research on substitute photodetector materials, including s-SWCNTs, aims to bring down the price of shortwave infrared photodetectors while improving performance and efficiency.

Leading researchers from Peking University described the current technology and difficulties involved in converting s-SWCNT films into shortwave infrared photodetectors to encourage further study and uses of the technology.

High-purity s-SWCNT films suited for large-area, homogeneous, and high-performance optoelectronic devices and applications that detect and process light, including photodetectors, will be made possible by recent advancements in solution purification technology.

Before s-SWCNT films can match or even surpass the performance level of conventional, more expensive photodetectors made of InGaAs or related materials, further improvement of film purity, thickness, clarity, and array alignment must be accomplished.